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| SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION *With TO-220C package *DARLINGTON *Collector saturation voltage *Complement to type TIP135/136/137 APPLICATIONS *Designed for general-purpose amplifier and low speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP130/131/132 ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP130 VCBO Collector-base voltage TIP131 TIP132 TIP130 VCEO Collector-emitter voltage TIP131 TIP132 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-peak Base current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 8 12 0.3 70 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.785 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP130 VCEO(SUS) Collector-emitter sustaining voltage TIP131 TIP132 VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage TIP130 ICBO Collector cut-off current TIP131 TIP132 TIP130 ICEO Collector cut-off current TIP131 TIP132 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance IC=4A ,IB=16mA IC=6A ,IB=30mA IC=4A ; VCE=4V VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=4A ; VCE=4V IE=0 ; VCB=10V,f=0.1MHz IC=30mA, IB=0 CONDITIONS SYMBOL TIP130/131/132 MIN 60 80 100 TYP. MAX UNIT V 2.0 3.0 2.5 V V V 0.2 mA 0.5 mA 5.0 500 1000 15000 250 mA pF 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE TIP130/131/132 Fig.2 Outline dimensions(unindicated tolerance:0.1mm) 3 |
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